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Friday, July 24, 2020 | History

4 edition of Vacuum ultraviolet laser-driven etching of InP using hydrocarbon percursor gases found in the catalog.

Vacuum ultraviolet laser-driven etching of InP using hydrocarbon percursor gases

John David Moore

Vacuum ultraviolet laser-driven etching of InP using hydrocarbon percursor gases

by John David Moore

  • 37 Want to read
  • 19 Currently reading

Published by National Library of Canada in Ottawa .
Written in English


Edition Notes

Thesis (M.Sc.)--University of Toronto, 1993.

SeriesCanadian theses = Thèses canadiennes
The Physical Object
FormatMicroform
Pagination2 microfiches : negative.
ID Numbers
Open LibraryOL15471585M
ISBN 100315923539
OCLC/WorldCa35943771

The RP Photonics Buyer's Guide contains 81 suppliers for ultraviolet lasers. Among them: Kapteyn-Murnane Laboratories. KMLabs Hyperion VUV provides bright femtosecond pulses at numerous wavelengths across the vacuum ultraviolet (VUV) region, from eV ( nm) to eV ( nm). The discrete tunability of the KMLabs Hyperion VUV vacuum ultraviolet source enables researchers . REVIEW OF SCIENTIFIC INSTRUME () High-intensity coherent vacuum ultraviolet source using unfocussed commercial dye lasers Daniel R. Albert, David L. Proctor, and H. Floyd Davisa) Baker Laboratory, Department of Chemistry and .

Still shorter wavelengths belong to the extreme UV (EUV). The term vacuum UV (below ≈ nm) refers to the wavelength range where a vacuum apparatus is often used, because the light is strongly absorbed in air. The vacuum UV includes the far and extreme UV. UVA stands for the range from to nm, UVB for – nm, and UVC for   A team of researchers in Japan has developed a solid-state lamp that emits high-energy ultraviolet (UV) light at the shortest wavelengths ever recorded .

Multifilm Plasma Etching System. NEEXa is a multipurpose high-density, low-pressure plasma etching system with good uniformity and repeatability. The system is capable of etching many materials, including; III-V, metals, ceramics and optical materials. Cold heating of the Vacuum Chamber using VUV. High energy “cold” UV-radiation in the Vacuum-UV (VUV) at nm (approximately eV), which corresponds to the resonant frequency of H2O, is used to quickly dissolve the molecular bonds on the substrate, after .


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Vacuum ultraviolet laser-driven etching of InP using hydrocarbon percursor gases by John David Moore Download PDF EPUB FB2

Ultraviolet (UV) is a form of electromagnetic radiation with wavelength from 10 nm (with a corresponding frequency of approximately 30 PHz) to nm ( THz), shorter than that of visible light but longer than radiation is present in sunlight, and constitutes about 10% of the total electromagnetic radiation output from the is also produced by electric arcs and specialized.

ASTM D, Standard Test Method for Determination of Hydrocarbon Group Types and Select Hydrocarbon and Oxygenate Compounds in Automotive Spark-Ignition Engine Fuel Using Gas Chromatography with Vacuum Ultraviolet Absorption Spectroscopy Detection (GC-VUV), ASTM International, West Conshohocken, PA,Ultraviolet (UV) light has become important as the various technologies that are necessary to provide practical UV laser imaging and beam delivery systems have progressed, especially the light sources.

UV light has been available only from low power lamps, thereby restricting the usefulness of the technology. In VACUUM ULTRAVIOLET LASERS each practical case the value depends on the intensity and the wavelength of the laser, on focusing conditions, and on the kind of excited gas.

The upper Vacuum ultraviolet laser-driven etching of InP using hydrocarbon percursor gases book of the interval has been obtained at 1= 25 nm, for the 21st harmonic of a nm, ps pulse duration laser, generated in helium [57].Cited by: 1.

Four-wave sum and difference frequency generation in metal vapors and rare gases has advanced significantly in recent years to cover a substantial portion of the vacuum ultraviolet (VUV) region.

It is now possible in the range from to 80 nm to achieve pulse energies corresponding to 10 12 photons per pulse at 10 Hz in bandwidths as narrow. Indium Phosphide (InP) is a compound semiconductor material of III-V group.

This material has a wide band gap and a high electron mobility. • Band Gap: eV (K) ( times that of Si) • Electron Mobility: 5, cm 2 /Vs (K) ( times that of Si).

Also, this. Typical etch rate of CH4/H2-based etch process is ~ A/min. In order to have a reasonable production yield with the low rate, a batch process has been popular.

However, using a batch chamber for InP etching can bring uniformity issues. Uniformity is a significant issue for mass production. Etch rate can be changed from wafer to wafer. gas ratio leads to a high etch rate but also gives an undercut etching profile.

Figure 7 shows the results of Cl 2/H 2 etch in ICP mode. The etch rate is nm/min with selectivity to nitride mask of > InP grating etching or shallow etching Although the CH 4/H 2 InP etching process can be replaced by faster, cleaner etch chemistries.

High etch-rate recipe: Switching time Pressure RF coil power RF bias power Gas flow [sccm] Etch sec 40 T40mTorr W 40W SF SF 6 Passivation 3 sec 14mTorr W 20W C 4 F 8 Etch rate ≈ 8µm/min for µm feature size with ~ 20% exposed area High selectivity to PR ≈ Volatile hydrocarbons such as gasoline, grease, paints and others fluoresce when exposed to UV, and can be seen as fragments of incendiary devices.

Ambient light must be minimized for use of UV light at a fire scene. Relevant UV Lamp Models. Mini UV Black Light Lamp, LW UVL Lantern Style UV Lamp.

LW, 6W, ML; Handheld UV Lamp. LW, 6W, UVL Our interest in introducing oxygen and/or nitrogen atoms in CH4/H2/Ar plasma mixtures by means of organic precursors in the place of CH4 or by partly substituting O2 or N2O for H2 and thereby contr.

studies have been made on the etching mechanism of Si and SiO2, only few attempts have so far been made on that of SiN x:H.5–9) In particular, we focused on the irradiation effect of vacuum ultraviolet (VUV)/ultraviolet (UV), radicals, and ions on the etching mechanism of SiN x:H films.

For the dielectric etching of, for example, SiO2, numerous. E3 Etch UV film is the perfect resist for etching on metal for jewelry making and more.

Learn how to use the resist film to maintain fine lines and detail with this durable resist. We have measured the axial (z) and radial (x) distribution of the vacuum ultraviolet emission from excimer laser generated aluminum plasmas in vacuum and in mTorr of argon.

The ratio of the radiated line intensities (emission in a gas versus vacuum) on the z axis (i.e., x=0) increased exponentially with distance from the target surface for plasmas generated in a mTorr argon ambient.

Scientists have developed a solid-state lamp that emits high-energy ultraviolet (UV) light at the shortest wavelengths ever recorded for such a device, from.

Although supercontinuum sources are readily available for the visible and near infrared (IR), and recently also for the mid-IR, many areas of biology, chemistry, and physics would benefit greatly from the availability of compact, stable, and spectrally bright deep-ultraviolet and vacuum-ultraviolet (VUV) supercontinuum sources.

Such sources have, however, not yet been developed. Hence the name "vacuum" ultraviolet - it only propagates in vacuum. Vacuum ultraviolet, or VUV, light has a maximum wavelength of nanometers.

Extreme ultraviolet, or EUV, light has a shortest wavelength around 1 to 2 nanometers. The border between VUV and EUV is nebulous. The border between EUV and soft x-rays is similarly fuzzy.

Existing commercial vacuum UV lamps are bulky and expensive, however. They also use a lot of power, run hot, have short lifetimes and contain toxic gasses that can pollute the environment and harm people.

The new lamp avoids those issues because it was fabricated with a solid-state phosphor made from a thin film of KMgF3, which is easy to make. Effects of ultraviolet (UV) light irradiation on polymer dry etching processes have been investigated with the use of a low-energy mass-selected ion beam injection system.

I have tried the following recipe: mTorr, sccm SF6, 10 sccm O2, at W but the etch rate is very low and I'd ideally I'd like to etch ~ um equally in all directions. Results show detection of the parent ion, various fragments, and extracellular material from biofilms using LDPI-MS with both vacuum and extreme ultraviolet photons.

Parent ions were observed for both cases, but extreme ultraviolet photons (16 – 24 eV) induced more fragmentation than vacuum ultraviolet (8 – 14 eV) photons.Abstract: A unique gas laser system suitable for achieving more than a kW peak power in the vacuum ultraviolet spectral region near Å is described.

First, the theory of the molecular hydrogen laser is presented. The novel operation of the device to generate a fast-rising current pulse which travels down the discharge channel at the velocity of light is described.Resonance Ltd. electrodeless Vacuum Ultra-Violet sources are designed to be reliable, compact and maintenance free with an operating life often in excess of hours.

We offer light sources with line, continuum, molecular, and Auroral emissions that mount to a inch or larger CF type flange.